Manufacturer | Infineon |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Configuration | Single |
Rise Time | 5 ns |
Fall Time | 10 ns |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Packaging | Reel |
Pd – Power Dissipation | 188 W |
Product Type | MOSFET |
Factory Pack Quantity | 1000 |
Technology | Si |
Tradename | OptiMOS |
Part # Aliases | IPB12N6S42XT SP000415560 IPB120N06S402ATMA1 |
Unit Weight | 0.139332 oz |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 60 V |
Id – Continuous Drain Current | 120 A |
Rds On – Drain-Source Resistance | 2.4 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Qg – Gate Charge | 150 nC |