IPB120N04S4-02

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	120 A
Rds On – Drain-Source Resistance	1.58 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2 V
Qg – Gate Charge	134 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	158 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Reel
Configuration	Single
Fall Time	30 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	16 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	27 ns
Width	9.25 mm
Part # Aliases	IPB12N4S42XT SP000764726 IPB120N04S402ATMA1
Unit Weight	0.139332 oz